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KM416C4104C Folha de dados(PDF) 4 Page - Samsung semiconductor

Nome de Peças KM416C4104C
Descrição Electrónicos  4M x 16bit CMOS Dynamic RAM with Extended Data Out
Download  36 Pages
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Fabricante Electrônico  SAMSUNG [Samsung semiconductor]
Página de início  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416C4104C Folha de dados(HTML) 4 Page - Samsung semiconductor

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KM416C4004C, KM416C4104C
CMOS DRAM
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one EDO mode cycle time
tHPC.
DC AND OPERATING CHARACTERISTICS (Continued)
ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @
tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @
tRC=min.)
ICC4* : Extended Data Out Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @
tHPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @
tRC=min)
Symbol
Power
Speed
Max
Units
KM416C4004C
KM416C4104C
ICC1
Don
′t care
-5
-6
90
80
120
110
mA
mA
ICC2
Normal
Don
′t care
2
2
mA
ICC3
Don
′t care
-5
-6
90
80
120
110
mA
mA
ICC4
Don
′t care
-5
-6
100
90
110
100
mA
mA
ICC5
Normal
Don
′t care
1
1
mA
ICC6
Don
′t care
-5
-6
120
110
120
110
mA
mA


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Descrição semelhante - KM416C4104C

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