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KM416C4104C Folha de dados(PDF) 8 Page - Samsung semiconductor

Nome de Peças KM416C4104C
Descrição Electrónicos  4M x 16bit CMOS Dynamic RAM with Extended Data Out
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Fabricante Electrônico  SAMSUNG [Samsung semiconductor]
Página de início  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416C4104C Folha de dados(HTML) 8 Page - Samsung semiconductor

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KM416C4004C, KM416C4104C
CMOS DRAM
KM416C40(1)04C Truth Table
RAS
LCAS
UCAS
W
OE
DQ0 - DQ7
DQ8-DQ15
STATE
H
X
X
X
X
Hi-Z
Hi-Z
Standby
L
H
H
X
X
Hi-Z
Hi-Z
Refresh
L
L
H
H
L
DQ-OUT
Hi-Z
Byte Read
L
H
L
H
L
Hi-Z
DQ-OUT
Byte Read
L
L
L
H
L
DQ-OUT
DQ-OUT
Word Read
L
L
H
L
H
DQ-IN
-
Byte Write
L
H
L
L
H
-
DQ-IN
Byte Write
L
L
L
L
H
DQ-IN
DQ-IN
Word Write
L
L
L
H
H
Hi-Z
Hi-Z
-
NOTES
An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles
before proper device operation is achieved.
VIH(min) and VIL(max) are reference levels for measuring timing of input signals. Transition times are measured between
VIH(min) and VIL(max) and are assumed to be 2ns for all inputs.
Measured with a load equivalent to 2 TTL load and 100pF.
Operation within the
tRCD(max) limit insures that tRAC(max) can be met, tRCD(max) is specified as a reference point only.
If
tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by tCAC.
Assumes that
tRCD
tRCD(max).
These parameter defines the time at which the output achieves the open circuit condition and is not referenced to Voh or Vol.
tWCS, tRWD, tCWD and tAWD are non restrictive operating parameters. They are included in the data sheet as electrical charac-
teristics only. If
tWCS
tWCS(min), the cycle is an early write cycle and the data output will remain high impedance for the dura-
tion of the cycle. If
tCWD
tCWD(min), tRWDtRWD(min) and tAWDtAWD(min), then the cycle is a read-modify-write cycle and the
data output will contain the data read from the selected address. If neither of the above conditions is satisfied, the condition of
the data out is indeterminate.
Either
tRCH or tRRH must be satisfied for a read cycle.
These parameters are referenced to CAS falling edge in early write cycles and to W falling edge in OE controlled write cycle
and read-modify-write cycles.
Operation within the
tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as a reference point only.
If
tRAD is greater than the specified tRAD(max) limit, then access time is controlled by tAA.
These specifications are applied in the test mode.
In test mode read cycle, the value of
tRAC, tAA, tCAC is delayed by 2ns to 5ns for the specified values. These parameters
should be specified in test mode cycles by adding the above value to the specified value in this data sheet.
tASC, tCAH are referenced to the earlier CAS falling edge.
tCP is specified from the later CAS rising edge in the previous cycle to the earlier CAS falling edge in the next cycle.
tCWD is referenced to the later CAS falling edge at word read-modify-write cycle.
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