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KM416V4000C Folha de dados(PDF) 9 Page - Samsung semiconductor

Nome de Peças KM416V4000C
Descrição Electrónicos  4M x 16bit CMOS Dynamic RAM with Fast Page Mode
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Fabricante Electrônico  SAMSUNG [Samsung semiconductor]
Página de início  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416V4000C Folha de dados(HTML) 9 Page - Samsung semiconductor

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KM416V4000C, KM416V4100C
CMOS DRAM
tASC, tCAH are referenced to the earlier CAS falling edge.
tCP is specified from the last CAS rising edge in the previous cycle to the first CAS falling edge in the next cycle.
tCWD is referenced to the later CAS falling edge at word read-modify-write cycle.
tCWL is specified from W falling edge to the earlier CAS rising edge.
tCSR is referenced to earlier CAS falling before RAS transition low.
tCHR is referenced to the later CAS rising high after RAS transition low.
tDS is specified for the earlier CAS falling edge and tDH is specified by the later CAS falling edge.
If
tRASS
≥100us, then RAS precharge time must use tRPS instead of tRP.
For RAS-only-Refresh and Burst CAS-before-RAS refresh mode, 4096 cycles(4K/8K) of burst refresh must be executed within
64ms before and after self refresh, in order to meet refresh specification.
For distributed CAS-before-RAS with 15.6us interval, CBR refresh should be executed with in 15.6us immediately before and
after self refresh in order to meet refresh specification.
tCSR
tCHR
RAS
LCAS
UCAS
tDS
tDH
LCAS
UCAS
DQ0 ~ DQ15
Din
21.
20.
19.
15.
14.
13.
18.
17.
16.
22.


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