KM416V4104C datasheet(6/36 Pages) SAMSUNG

Nome de Peças	KM416V4104C

Descrição Electrónicos	4M x 16bit CMOS Dynamic RAM with Extended Data Out

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Fabricante Electrônico	SAMSUNG [Samsung semiconductor]

Página de início	http://www.samsung.com/Products/Semiconductor

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KM416V4004C,KM416V4104C

CMOS DRAM

AC CHARACTERISTICS (Continued)

Parameter

Symbol

-45

-5

-6

Units

Note

Min

Max

Min

Max

Min

Max

Data hold time

tDH

7

10

ns

9,19

Refresh period (Normal)

tREF

64

ms

Refresh period (L-ver)

tREF

128

ms

Write command set-up time

tWCS

0

ns

7

CAS to W delay time

tCWD

24

27

32

ns

7,15

RAS to W delay time

tRWD

57

64

77

ns

7

Column address to W delay time

tAWD

35

39

47

ns

7

CAS set-up time (CAS -before-RAS refresh)

tCSR

5

ns

17

CAS hold time (CAS -before-RAS refresh)

tCHR

10

ns

18

RAS to CAS precharge time

tRPC

5

ns

Access time from CAS precharge

tCPA

24

28

35

ns

3

Hyper Page cycle time

tHPC

17

20

25

ns

21

Hyper Page read-modify-write cycle time

tHPRWC

47

56

ns

21

CAS precharge time (Hyper page cycle)

tCP

6.5

7

10

ns

14

RAS pulse width (Hyper page cycle)

tRASP

45

200K

50

200K

60

200K

ns

RAS hold time from CAS precharge

tRHCP

24

30

35

ns

OE access time

tOEA

12

13

15

ns

3

OE to data delay

tOED

8

10

13

ns

CAS precharge to W delay time

tCPWD

36

41

52

ns

Output buffer turn off delay time from OE

tOEZ

3

11

3

13

3

13

ns

6

OE command hold time

tOEH

5

ns

Write command set-up time (Test mode in)

tWTS

10

ns

11

Write command hold time (Test mode in)

tWTH

10

ns

11

W to RAS precharge time (C-B-R refresh)

tWRP

10

ns

W to RAS hold time (C-B-R refresh)

tWRH

10

ns

Output data hold time

tDOH

4

5

ns

Output buffer turn off delay from RAS

tREZ

3

13

3

13

3

13

ns

6,20

Output buffer turn off delay from W

tWEZ

3

13

3

13

3

13

ns

6

W to data delay

tWED

8

15

ns

OE to CAS hold time

tOCH

5

ns

CAS hold time to OE

tCHO

5

ns

OE precharge time

tOEP

5

ns

W pulse width (Hyper Page Cycle)

tWPE

5

ns

RAS pulse width (C-B-R self refresh)

tRASS

100

us

22,23,24

RAS precharge time (C-B-R self refresh)

tRPS

74

90

110

ns

22,23,24

CAS hold time (C-B-R self refresh)

tCHS

-50

ns

22,23,24

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KM416V4104C Folha de dados(PDF) 6 Page - Samsung semiconductor

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Descrição semelhante - KM416V4104C

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