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KM68512B Folha de dados(PDF) 4 Page - Samsung semiconductor

Nome de Peças KM68512B
Descrição Electrónicos  64Kx8 bit Low Power CMOS Static RAM
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Fabricante Electrônico  SAMSUNG [Samsung semiconductor]
Página de início  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM68512B Folha de dados(HTML) 4 Page - Samsung semiconductor

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Revision 0.0
KM68512B Family
CMOS SRAM
January 1998
4
Advance
RECOMMENDED DC OPERATING CONDITIONS 1)
Note
1. Commercial Product : TA=0 to 70
°C, unless otherwise specified
Industrial Product : TA=-40 to 85
°C, unless otherwise specified
2. Overshoot : VCC+3.0V in case of pulse width≤30ns
3. Undershoot : -3.0V in case of pulse width
≤30ns
4. Overshoot and undershoot is sampled, not 100% tested
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
4.5
5.0
5.5
V
Ground
Vss
0
0
0
V
Input high voltage
VIH
2.2
-
Vcc+0.5V2)
V
Input low voltage
VIL
-0.53)
-
0.8
V
CAPACITANCE 1)(f=1MHz, TA=25
°C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=0V
-
6
pF
Input/Output capacitance
CIO
VIO=0V
-
8
pF
DC AND OPERATING CHARACTERISTICS
1. Industrial product = 15
µA
Item
Symbol
Test Conditions
Min
Typ
Max Unit
Input leakage current
ILI
VIN=Vss to Vcc
-1
-
1
µA
Output leakage current
ILO
CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc
-1
-
1
µA
Operating power supply
ICC
IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIL or VIH, Read
-
7
10
mA
Average operating current
ICC1
Cycle time=1§Á, 100% duty, IIO=0mA
CS1
≤0.2V, CS2≥VCC-0.2V, VIN≤0.2V or VIN≥Vcc -0.2V
Read
-
-
5
mA
Write
-
-
30
mA
ICC2
Cycle time=Min, 100% duty, IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIL or VIH
-
-
60
mA
Output low voltage
VOL
IOL=2.1mA
-
-
0.4
V
Output high voltage
VOH
IOH=-1.0mA
2.4
-
-
V
Standby Current(TTL)
ISB
CS1=VIH, CS2=VIL, Other inputs =VIL or VIH
-
-
3
mA
Standby Current (CMOS)
ISB1
CS1
≥Vcc-0.2V, CS2≥Vcc-0.2V or CS2≤0.2V
-
1
101)
µA


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