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KM416RD8ACD-RK80 Folha de dados(PDF) 4 Page - Samsung semiconductor

Nome de Peças KM416RD8ACD-RK80
Descrição Electrónicos  128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
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Fabricante Electrônico  SAMSUNG [Samsung semiconductor]
Página de início  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416RD8ACD-RK80 Folha de dados(HTML) 4 Page - Samsung semiconductor

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KM416RD8AC(D)/KM418RD8AC(D)
Direct RDRAM
Rev. 1.01 Oct. 1999
Overview
The Rambus Direct RDRAM™ is a general purpose high-
performance memory device suitable for use in a broad
range of applications including computer memory, graphics,
video, and any other application where high bandwidth and
low latency are required.
The 128/144-Mbit Direct Rambus DRAMs (RDRAM®) are
extremely high-speed CMOS DRAMs organized as 8M
words by 16 or 18 bits. The use of Rambus Signaling Level
(RSL) technology permits 600MHz to 800MHz transfer
rates while using conventional system and board design
technologies. Direct RDRAM devices are capable of
sustained data transfers at 1.25 ns per two bytes (10ns per
sixteen bytes).
The architecture of the Direct RDRAMs allows the highest
sustained bandwidth for multiple, simultaneous randomly
addressed memory transactions. The separate control and
data buses with independent row and column control yield
over 95% bus efficiency. The Direct RDRAM's thirty-two
banks support up to four simultaneous transactions.
System oriented features for mobile, graphics and large
memory systems include power management, byte masking,
and x18 organization. The two data bits in the x18 organiza-
tion are general and can be used for additional storage and
bandwidth or for error correction.
Features
Highest sustained bandwidth per DRAM device
- 1.6GB/s sustained data transfer rate
- Separate control and data buses for maximized
efficiency
- Separate row and column control buses for
easy scheduling and highest performance
- 32 banks: four transactions can take place simul-
taneously at full bandwidth data rates
Low latency features
- Write buffer to reduce read latency
- 3 precharge mechanisms for controller flexibility
- Interleaved transactions
Advanced power management:
- Direct RDRAM operates from a 2.5 volt supply
- Multiple low power states allows flexibility in power
consumption versus time to transition to active state
- Power-down self-refresh
Organization: 1Kbyte pages and 32 banks, x 16/18
- x18 organization allows ECC configurations or
increased storage/bandwidth
- x16 organization for low cost applications
Uses Rambus Signaling Level (RSL) for up to 800MHz
operation
The 128/144-Mbit Direct RDRAMs are offered in a CSP
horizontal package suitable for desktop as well as low-
profile add-in card and mobile applications.
Key Timing Parameters/Part Numbers
a.The “32s"designation indicates that this RDRAM core is composed of 32
banks which use a "split" bank architecture.
b.The “C“ designator indicates the normal package and the “D“ indicates the
mirrored package.
c.The “R“ designator indicates that this RDRAM core uses Normal Power
Self Refresh.
Figure 1: Direct RDRAM CSP Package
Organization
Speed
Part Number
Bin
I/O
Freq.
MHz
tRAC (Row
Access
Time) ns
256Kx16x32sa -RG60
600
53.3
KM416RD8AC(Db)-RcG60
-RK70
711
45
KM416RD8AC(D)-RK70
-RK80
800
45
KM416RD8AC(D)-RK80
256Kx18x32s
-RG60
600
53.3
KM418RD8AC(D)-RG60
-RK70
711
45
KM418RD8AC(D)-RK70
-RK80
800
45
KM418RD8AC(D)-RK80
SEC KOREA
KM4xxRD8AC
M
SEC KOREA
KM4xxRD8AD
a. Normal Package
b. Mirrored Package


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