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KM681000BLR-5 Folha de dados(PDF) 7 Page - Samsung semiconductor

Nome de Peças KM681000BLR-5
Descrição Electrónicos  128K x8 bit Low Power CMOS Static RAM
Download  11 Pages
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Fabricante Electrônico  SAMSUNG [Samsung semiconductor]
Página de início  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM681000BLR-5 Folha de dados(HTML) 7 Page - Samsung semiconductor

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PRELIMINARY
Revision 0.3
KM681000B Family
CMOS SRAM
April 1996
Address
Data Out
Previous Data Valid
Data Valid
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE (1)
(Address Controlled)
(CS1=OE=VIL, CS2= WE= VIH)
TIMING WAVEFORM OF READ CYCLE(WE=VIH)
Data Valid
High-Z
CS1
Address
CS2
OE
Data out
NOTES (READ CYCLE)
1.
tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage le vels.
2. At any given temperature and voltage condition,
tHZ(max.) is less than tLZ(min.) both for a given device and from device to device.
tRC
tOH
tOH
tAA
tOLZ
tLZ
tOHZ
tHZ(1,2)
tCO1
tAA
tRC
tCO2
tOE


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