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KM684002-25 Folha de dados(PDF) 4 Page - Samsung semiconductor

Nome de Peças KM684002-25
Descrição Electrónicos  512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range.
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Fabricante Electrônico  SAMSUNG [Samsung semiconductor]
Página de início  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM684002-25 Folha de dados(HTML) 4 Page - Samsung semiconductor

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KM684002, KM684002E, KM684002I
CMOS SRAM
PRELIMINARY
Rev 3.0
- 4 -
June -1997
TEST CONDITIONS
NOTE: Above test conditions are also applied at industrial temperature ranges.
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3§À
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS(TA=0 to 70
°C, VCC=5.0V±10%, unless otherwise noted.)
Output Loads(A)
Output Loads(B)
DOUT
5pF*
480
255
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
+5.0V
DOUT
30pF*
480
255
+5.0V
* Including Scope and Jig Capacitance
READ CYCLE
NOTE: Above parameters are also guaranteed at extended and industrial temperature ranges.
Parameter
Symbol
KM684002-17
KM684002-20
KM684002-25
Unit
Min
Max
Min
Max
Min
Max
Read Cycle Time
tRC
17
-
20
-
25
-
§À
Address Access Time
tAA
-
17
-
20
-
25
§À
Chip Select to Output
tCO
-
17
-
20
-
25
§À
Output Enable to Valid Output
tOE
-
8
-
10
-
12
§À
Chip Enable to Low-Z Output
tLZ
3
-
3
-
3
-
§À
Output Enable to Low-Z Output
tOLZ
0
-
0
-
0
-
§À
Chip Disable to High-Z Output
tHZ
0
7
0
8
0
10
§À
Output Disable to High-Z Output
tOHZ
0
7
0
8
0
10
§À
Output Hold from Address Change
tOH
3
-
4
-
5
-
§À
Chip Selection to Power Up Time
tPU
0
-
0
-
0
-
§À
Chip Selection to Power DownTime
tPD
-
17
-
20
-
25
§À


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