BAT54CV datasheet(3/9 Pages) NXP

Nome de Peças	BAT54CV

Descrição Electrónicos	Two Schottky barrier double diodes in ultra small SOT666 package

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BAT54CV_2

Objective data sheet

Rev. 02 — 15 January 2010

3 of 9

NXP Semiconductors

BAT54CV

Two Schottky barrier double diodes in ultra small SOT666 package

[1]

Refer to SOT666 standard mounting conditions.

6.

Thermal characteristics

[1]

Refer to SOT666 standard mounting conditions.

[2]

Reflow soldering is the only recommended soldering method.

7.

Characteristics

[1]

Pulse test: tp ≤ 300 μs; δ≤ 0.02.

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -440

mW

Table 5.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1][2] --

225

K/W

Table 7.

Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

VF

forward voltage

see Figure 1;

[1]

IF = 0.1 mA

-

240

mV

IF = 1 mA

-

320

mV

IF = 10 mA

-

400

mV

IF = 30 mA

-

500

mV

IF = 100 mA

-

800

mV

IR

reverse current

VR = 25 V; see Figure 2

--

2

μA

Cd

diode capacitance

VR = 1 V; f = 1 MHz;

see Figure 3

--

10

pF

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