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SL3S1203FTB0 Folha de dados(PDF) 11 Page - NXP Semiconductors

Nome de Peças SL3S1203FTB0
Descrição Electrónicos  UCODE G2iL and G2iL
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Fabricante Electrônico  NXP [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo NXP - NXP Semiconductors

SL3S1203FTB0 Folha de dados(HTML) 11 Page - NXP Semiconductors

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SL3S1203_1213_SDS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product short data sheet
PUBLIC
Rev. 3.2 — 9 November 2010
198732
11 of 22
NXP Semiconductors
SL3S1203_1213
UCODE G2iL and G2iL+
In addition to the three memory banks one configuration word to handle the G2iL specific
features is available at EPC bank 01 address 200h.
Memory pages (16 bit words) pre-programmed to zero will not execute an erase cycle
before writing data to it. This approach accelerates initialization of the chip and enables
faster programming of the memory.
12. Limiting values
[1]
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any conditions other
than those described in the Operating Conditions and Electrical Characteristics section of this specification
is not implied.
[2]
This product includes circuitry specifically designed for the protection of its internal devices from the
damaging effects of excessive static charge. Nonetheless, it is suggested that conventional precautions be
taken to avoid applying greater than the rated maxima.
[3]
For ESD measurement, the die chip has been mounted into a CDIP20 package.
Table 9.
Limiting values[1][2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Voltages are referenced to RFN
Symbol
Parameter
Conditions
Min
Max
Unit
Bare die and SOT886 limitations
Tstg
storage temperature
−55
+125
°C
Tamb
ambient temperature
−40
+85
°C
VESD
electrostatic discharge
voltage
Human body
model
[3]
-
± 2kV
Pad limitations
Vi
input voltage
absolute limits,
VDD-OUT pad
−0.5
+2.5
V
Io
output current
absolute limits
input/output
current, VDD-OUT
pad
−0.5
+0.5
mA
Pi
input power
maximum power
dissipation, RFP
pad
-100
mW


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