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STD12NM50ND Folha de dados(PDF) 5 Page - STMicroelectronics |
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STD12NM50ND Folha de dados(HTML) 5 Page - STMicroelectronics |
5 / 16 page STB12NM50ND, STD12NM50ND, STF12NM50ND Electrical characteristics Doc ID 14936 Rev 2 5/16 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 250 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V Figure 18 - 12 15 40 17 - ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 11 44 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 11 A, VGS=0 - 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 11 A, di/dt =100 A/µs, VDD = 100 V Figure 20 - 122 650 11 ns nC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current VDD = 100 V di/dt =100 A/µs, ISD = 11 A Tj = 150 °C, Figure 20 - 160 940 12 ns nC A |
Nº de peça semelhante - STD12NM50ND |
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Descrição semelhante - STD12NM50ND |
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