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STB80NF10 Folha de dados(PDF) 5 Page - STMicroelectronics |
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STB80NF10 Folha de dados(HTML) 5 Page - STMicroelectronics |
5 / 14 page STB80NF10, STP80NF10 Electrical characteristics Doc ID 6958 Rev 18 5/14 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD Source-drain current - 80 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 320 A VSD (2) 2. Pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 80 A, VGS = 0 - 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80 A, VDD = 50 V di/dt = 100 A/µs, Tj=150 °C - 106 450 8.5 ns nC A |
Nº de peça semelhante - STB80NF10_09 |
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Descrição semelhante - STB80NF10_09 |
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