2SK3120 datasheet(3/4 Pages) SANYO

Nome de Peças	2SK3120

Descrição Electrónicos	Ultrahigh-Speed Switching Applications

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Fabricante Electrônico	SANYO [Sanyo Semicon Device]

Página de início	https://www.sanyo-av.com/us/

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3 / 4 page

2SK3120

No.6103–3/4

8

4

0

12

16

202428

32

SW Time - I D

P D - Ta

P D - Tc

VDD=15V

VGS=10V

2

3

5

7

2

3

5

7

2

35

7

2

35

7

Ciss,Coss,Crss - VDS

VGS - Qg

f=1MHz

Ciss

Coss

Crss

2

3

5

7

2

3

5

7

VDS=10V

ID=2A

td(on)

td(off)

tf

100

20

60

40

80

120

100

140

160

0

0.2

0.4

0.6

0.8

1.0

1.2

1.3

1.4

20

60

40

80

120

100

140

160

0

1.0

2.0

3.0

3.5

4.0

10

1000

12345

0

1

2

3

4

5

6

7

8

9

10

1.0

100

1.0

10

0.1

Drain-to-Source Voltage,VDS –V

Total Gate Charge, Qg –

nC

Drain-to-Source Voltage,VDS –V

Drain Current, ID –A

Case Temperature, Tc –

°C

Ambient Temperature, Ta –

°C

Mounted

on

a

ceramic

board

(250mm

2

×

0.8mm)

VDS=10V

VGS=0

23

5

7

23

5

7

23

5

7

2

3

5

7

2

3

5

7

2

3

5

7

Tc=-25

°C

25°

C

75°

C

I F - VSD

2

3

5

7

2

3

5

7

0.1

0.01

0.1

1.0

10

1.0

10

0.1

0.01

1.0

10

0

0.2

0.4

0.6

1.0

0.8

1.2

1.4

Drain Current, ID –A

Diode Forward Voltage, VSD –V

| yfs | - ID

A S O

IDP=8A

2

3

5

7

2

3

5

7

2

3

5

7

5

2

3

57

2

3

57

2

3

0.1

0.01

1.0

10

1.0

0.1

Operation in this area

is limited by RDS(on).

100

µs

100ms

10ms

1ms

DC

operation

ID=2A

Tc= 25˚C

1pulse

Nº de peça semelhante - 2SK3120

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Inchange Semiconductor ...	2SK312	343Kb / 2P	isc N-Channel MOSFET Transistor
Sanyo Semicon Device	2SK3121	125Kb / 4P	Ultrahigh-Speed Switching Applications
Sanyo Semicon Device	2SK3122	120Kb / 4P	Ultrahigh-Speed Switching Applications
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Descrição semelhante - 2SK3120

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Sanyo Semicon Device	CPH3304	132Kb / 4P	Ultrahigh-Speed Switching Applications
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	2SJ417	89Kb / 3P	Ultrahigh-Speed Switching Applications
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