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STP11NM80 Folha de dados(PDF) 9 Page - STMicroelectronics |
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STP11NM80 Folha de dados(HTML) 9 Page - STMicroelectronics |
9 / 17 page STB/F/P/W11NM80 Test circuits Doc ID 9241 Rev 10 9/17 3 Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit Figure 19. Test circuit for inductive load switching and diode recovery times Figure 20. Unclamped inductive load test circuit Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform AM01468v1 VGS PW VD RG RL D.U.T. 2200 µF 3.3 µF VDD AM01469v1 VDD 47k Ω 1k Ω 47k Ω 2.7k Ω 1k Ω 12V Vi=20V=VGMAX 2200 µF PW IG=CONST 100 Ω 100nF D.U.T. VG AM01470v1 A D D.U.T. S B G 25 Ω A A B B RG G FAST DIODE D S L=100 µH µF 3.3 1000 µF VDD AM01471v1 Vi Pw VD ID D.U.T. L 2200 µF 3.3 µF VDD AM01472v1 V(BR)DSS VDD VDD VD IDM ID AM01473v1 VDS ton tdon tdoff toff tf tr 90% 10% 10% 0 0 90% 90% 10% VGS |
Nº de peça semelhante - STP11NM80 |
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Descrição semelhante - STP11NM80 |
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