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STB9NK90Z Folha de dados(PDF) 5 Page - STMicroelectronics

Nome de Peças STB9NK90Z
Descrição Electrónicos  N-channel 900 V, 1.1 廓, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH??Power MOSFET
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB9NK90Z Folha de dados(HTML) 5 Page - STMicroelectronics

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STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z
Electrical characteristics
Doc ID 9479 Rev 7
5/17
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise Time
VDD = 450 V, ID = 4 A,
RG = 4.7 Ω, VGS = 10 V
Figure 19
Figure 24
-
22
13
-
ns
ns
td(off)
tf
Turn-off delay time
Fall time
-
55
28
-
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
-
8A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
32
A
VSD
(2)
2.
Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward on voltage
ISD = 8 A, VGS=0
-
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A,
di/dt = 100 A/µs,
VDD = 50 V, Tj = 150 °C
Figure 21
-
950
10
21
ns
µC
A
Table 9.
Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-source breakdown voltage IGS = ±1 mA(open drain)
30
-
V


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