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STB270N4F3 Folha de dados(PDF) 5 Page - STMicroelectronics |
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STB270N4F3 Folha de dados(HTML) 5 Page - STMicroelectronics |
5 / 14 page STB270N4F3, STI270N4F3 Electrical characteristics Doc ID 13208 Rev 4 5/14 Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current D²PAK - 160 A I²PAK - 120 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) D²PAK - 640 A I²PAK - 480 A VSD (2) 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% Forward on voltage ISD=80 A, VGS=0 -1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=160 A, di/dt = 100 A/µs, VDD=32 V, Tj=150 °C (see Figure 15) - 70 225 3.2 ns nC A |
Nº de peça semelhante - STB270N4F3 |
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Descrição semelhante - STB270N4F3 |
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