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STX30NM60ND Folha de dados(PDF) 5 Page - STMicroelectronics |
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STX30NM60ND Folha de dados(HTML) 5 Page - STMicroelectronics |
5 / 18 page STx30NM60ND Electrical characteristics 5/18 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 25 100 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Forward on voltage ISD = 25 A, VGS = 0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 25 A, VDD = 60 V di/dt=100 A/µs (see Figure 20) 170 1.2 15 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 25 A,VDD = 60 V di/dt=100 A/µs, TJ = 150 °C (see Figure 20) 250 2.5 20 ns µC A |
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