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BC847CDXV6T1G Folha de dados(PDF) 4 Page - ON Semiconductor

Nome de Peças BC847CDXV6T1G
Descrição Electrónicos  Dual General Purpose Transistors
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BC847CDXV6T1G Folha de dados(HTML) 4 Page - ON Semiconductor

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BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5
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4
TYPICAL CHARACTERISTICS
Figure 5. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 6. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02
1.0
10
0
20
0.1
0.4
0.8
0.2
1.0
10
100
-55
°C to +125°C
TA = 25°C
IC = 50 mA
IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
Figure 7. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 8. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4
0.6
1.0
10
20
1.0
2.0
6.0
40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7
1.0
10
20
2.0
50
30
7.0
5.0
3.0
0.5
VCE = 10 V
TA = 25°C
0.8
4.0
8.0
TA = 25°C
Cob
Cib
Figure 9. Safe Operating Area
VCE, COLLECTOR EMITTER VOLTAGE (V)
100
10
1
0.1
0.001
0.01
0.1
1
Thermal Limit
100 mS
10 mS
1 mS
1 S


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