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BCW70LT1D Folha de dados(PDF) 5 Page - ON Semiconductor |
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5 / 6 page BCW70LT1G http://onsemi.com 5 TYPICAL DYNAMIC CHARACTERISTICS Figure 12. Current−Gain — Bandwidth Product IC, COLLECTOR CURRENT (mA) Figure 13. Capacitance VR, REVERSE VOLTAGE (VOLTS) 500 0.5 10 50 70 100 200 300 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 TJ = 25°C VCE = 20 V 5.0 V 1.0 2.0 3.0 5.0 7.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.05 Cib Cob TJ = 25°C Figure 14. Thermal Response t, TIME (ms) 1.0 0.01 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZqJA(t) = r(t) w RqJA TJ(pk) - TA = P(pk) ZqJA(t) t1 t2 P(pk) FIGURE 16 TJ, JUNCTION TEMPERATURE (°C) 104 -4 0 Figure 15. Typical Collector Leakage Current DESIGN NOTE: USE OF THERMAL RESPONSE DATA A train of periodical power pulses can be represented by the model as shown in Figure 16. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 14 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 14 by the steady state value RqJA. Example: Dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN−569. 10-2 10-1 100 101 102 103 -2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 VCC = 30 V ICEO ICBO AND ICEX @ VBE(off) = 3.0 V |
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