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SPI11N60CFD Folha de dados(PDF) 4 Page - Infineon Technologies AG |
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SPI11N60CFD Folha de dados(HTML) 4 Page - Infineon Technologies AG |
4 / 12 page 200 9-04-24 Rev. 2. 6 Page 4 SP I11N60CFD Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 11 A Inverse diode direct current, pulsed ISM - - 28 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=480V, IF=IS , diF/dt=100A/µs - 140 - ns Reverse recovery charge Qrr - 0.7 - µC Peak reverse recovery current Irrm - 11 - A Peak rate of fall of reverse recovery current dirr/dt - 1200 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.015 K/W Rth2 0.03 Rth3 0.056 Rth4 0.197 Rth5 0.216 Rth6 0.083 Thermal capacitance Cth1 0.0001878 Ws/K Cth2 0.0007106 Cth3 0.000988 Cth4 0.002791 Cth5 0.007285 Cth6 0.063 External Heatsink Tj T case Tamb C th1 C th2 Rth1 R th,n C th,n P tot (t) |
Nº de peça semelhante - SPI11N60CFD |
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Descrição semelhante - SPI11N60CFD |
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