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SPI11N65C3 Folha de dados(PDF) 1 Page - Infineon Technologies AG

Nome de Peças SPI11N65C3
Descrição Electrónicos  New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
Download  15 Pages
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Fabricante Electrônico  INFINEON [Infineon Technologies AG]
Página de início  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPI11N65C3 Folha de dados(HTML) 1 Page - Infineon Technologies AG

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200
7-08-30
Rev. 2.
9
Page 1
SPP11N65C3,SPA11N65C3
SPI11N65C3
Cool MOS™ Power Transistor
V DS
650
V
RDS(on)
0.38
ID
11
A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
PG-TO262
PG-TO220
FP
PG-TO220
Marking
11N65C3
11N65C3
11N65C3
Type
Package
Ordering Code
SPP11N65C3
PG-TO220
Q67040-S4557
SPA11N65C3
PG-TO220
FP
SP000216318
SPI11N65C3
PG-TO262
Q67040-S4561
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
11
7
111)
71)
A
Pulsed drain current, tp limited by Tjmax
ID puls
33
33
A
Avalanche energy, single pulse
ID=2.5A, VDD=50V
EAS
340
340
mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=4A, VDD=50V
EAR
0.6
0.6
Avalanche current, repetitive tAR limited by Tjmax
IAR
4
4
A
Gate source voltage
VGS
±20
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
±30
Power dissipation, TC = 25°C
Ptot
125
33
W
SPP_I
Operating and storage temperature
Tj , Tstg
-55...+150
°C


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