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SPI11N60S5 Folha de dados(PDF) 3 Page - Infineon Technologies AG

Nome de Peças SPI11N60S5
Descrição Electrónicos  Cool MOS??Power Transistor Feature New revolutionary high voltage technology
Download  12 Pages
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Fabricante Electrônico  INFINEON [Infineon Technologies AG]
Página de início  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPI11N60S5 Folha de dados(HTML) 3 Page - Infineon Technologies AG

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200
9-11-30
Rev. 2.
7
Page 3
SPP11N60S5
SPI11N60S5
Electrical Characteristics , at T
j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Characteristics
Transconductance
gfs
VDS2*ID*RDS(on)max,
ID=7A
-
6
-
S
Input capacitance
Ciss
VGS=0V, VDS=25V,
f
=1MHz
-
1460
-
pF
Output capacitance
Coss
-
610
-
Reverse transfer capacitance
Crss
-
21
-
Effective output capacitance,3)
energy related
Co(er)
VGS=0V,
VDS=0V to 480V
-
45
-
pF
Effective output capacitance,4)
time related
Co(tr)
-
85
-
Turn-on delay time
td(on)
VDD=350V, VGS=0/10V,
ID=11A, RG=6.8
-
130
-
ns
Rise time
tr
-
35
-
Turn-off delay time
td(off)
-
150
225
Fall time
tf
-
20
30
Gate Charge Characteristics
Gate to source charge
Qgs
VDD=350V, ID=11A
-
10.5
-
nC
Gate to drain charge
Qgd
-
24
-
Gate charge total
Qg
VDD=350V, ID=11A,
VGS=0 to 10V
-
41.5
54
Gate plateau voltage
V(plateau) VDD=350V, ID=11A
-
8
-
V
1Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3Co(er) is a fixed capacitance that gives the same stored energy asCoss while VDS is rising from 0 to 80% VDSS.
4Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.


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