SPI15N60CFD datasheet(3/12 Pages) INFINEON

Nome de Peças	SPI15N60CFD

Descrição Electrónicos	CoolMOSTM Power Transistor Intrinsic fast-recovery body diode

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Fabricante Electrônico	INFINEON [Infineon Technologies AG]

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SPI15N60CFD

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

-

1820

-

pF

Output capacitance

C oss

-

520

-

Reverse transfer capacitance

C rss

-21-

Effective output capacitance, energy

C o(er)

-61-

Effective output capacitance, time

C o(tr)

-

110

-

Turn-on delay time

t d(on)

-43-

ns

Rise time

t r

-24-

Turn-off delay time

t d(off)

-47-

Fall time

t f

-5

-

Gate Charge Characteristics

Gate to source charge

Q gs

-11-

nC

Gate to drain charge

Q gd

-38-

Gate charge total

Q g

-63

84

Gate plateau voltage

V plateau

-

7.3

-

V

2) Pulse width t

p limited by T j,max

3) Repetitive avalanche causes additional power losses that can be calculated asP

AV=E AR*f.

4) C

o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.

5) C

o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.

1) J-STD20 and JESD22

Values

V GS=0 V, V DS=25 V,

f =1 MHz

V DD=400 V,

V GS=10 V, I D=13.4 A,

R G=3.6 Ω

V DD=480 V,

I D=13.4 A,

V GS=0 to 10 V

V GS=0 V, V DS=0 V

to 480 V

Rev. 1.0

page 3

2007-01-29

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