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1N5420 Folha de dados(PDF) 1 Page - EIC discrete Semiconductors |
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1N5420 Folha de dados(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page 1N5415 - 1N5420 FAST RECOVERY RECTIFIERS PRV : 50 - 600 Volts Io : 3.0 Amperes FEATURES : * Glass Passivated Junction Chip * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast recovery time * Pb / RoHS Free MECHANICAL DATA : * Case : D2A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.645 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. SYMBOL 1N5415 1N5416 1N5417 1N5418 1N5419 1N5420 UNIT Maximum Working Peak Reverse Voltage VRWM 50 100 200 400 500 600 V Minimum Breakdown Voltage @ 50µA VBR(Min) 55 110 220 440 550 660 V Maximum Average Forward Current at Ta = 55 °C IF(AV) 3.0 A Maximum Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load Maximun Forward Voltage at IF = 3.0 A 1.10 at IF = 9.0 A 1.50 Maximum Reverse Current at VRWM Ta = 25 °C IR 1.0 Ta = 100 °C IR(H) 20 Maximum Reverse Recovery Time (1) Trr 150 250 400 ns Thermal Resistance, Junction to Lead (2) RӨJL 20 °C/W Junction Temperature Range TJ - 65 to + 175 °C Storage Temperature Range TSTG - 65 to + 175 °C Notes : (1) Reverse Recovery Test Conditions : IF = 0.5A, IRM = 1A, IR(REC) = 0.25 A . (2) At 3/8 inch (10 mm) lead length from body. Page 1 of 2 Rev. 00 : September 17, 2007 μA RATING 80 IFSM A V VF D2A 0.040 (1.02) 0.0385 (0.98) 1.00 (25.4) MIN. 0.161 (4.1) 0.154 (3.9) 0.284 (7.2) 0.268 (6.8) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Certificate TH97/10561QM Certificate TW00/17276EM |
Nº de peça semelhante - 1N5420 |
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Descrição semelhante - 1N5420 |
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