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STB80NF03L-04T4 Folha de dados(PDF) 3 Page - STMicroelectronics |
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STB80NF03L-04T4 Folha de dados(HTML) 3 Page - STMicroelectronics |
3 / 13 page STB80NF03L-04T4 Electrical ratings Doc ID 8479 Rev 4 3/13 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate-source voltage ±20 V ID (1) 1. Limited by package Drain current (continuous) at TC = 25 °C 80 A ID (1) Drain current (continuous) at TC = 100 °C 80 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25 °C 300 W Derating factor 2 W/°C dv/dt (3) 3. ISD ≤ 80 A, di/dt ≤ 240 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX Peak diode recovery voltage slope 2 V/ns EAS (4) 4. Starting Tj = 25 °C, ID = 80 A, VDD = 50 V Single pulse avalanche energy 2.3 J Tstg Tj Storage temperature Operating junction temperature -60 to 175 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.5 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
Nº de peça semelhante - STB80NF03L-04T4_09 |
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Descrição semelhante - STB80NF03L-04T4_09 |
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