STB80NF03L-04T4_09 datasheet(3/13 Pages) STMICROELECTRONICS

Nome de Peças	STB80NF03L-04T4

Descrição Electrónicos	N-channel 30 V, 0.0035 廓, 80 A D2PAK STripFET??II Power MOSFET

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STB80NF03L-04T4

Electrical ratings

Doc ID 8479 Rev 4

3/13

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

30

V

VGS

Gate-source voltage

±20

V

ID

(1)

1.

Limited by package

Drain current (continuous) at TC = 25 °C

80

A

ID

(1)

Drain current (continuous) at TC = 100 °C

80

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

320

A

PTOT

Total dissipation at TC = 25 °C

300

W

Derating factor

2

W/°C

dv/dt (3)

3.

ISD ≤ 80 A, di/dt ≤ 240 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX

Peak diode recovery voltage slope

2

V/ns

EAS

(4)

4.

Starting Tj = 25 °C, ID = 80 A, VDD = 50 V

Single pulse avalanche energy

2.3

J

Tstg

Tj

Storage temperature

Operating junction temperature

-60 to 175

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

0.5

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Tl

Maximum lead temperature for soldering purpose

300

°C

Nº de peça semelhante - STB80NF03L-04T4_09

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STB80NF03L-04T4	360Kb / 11P	N-CHANNEL 30V - 0.0035ohm - 80A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET
STMicroelectronics	STB80NF03L-04T4	363Kb / 11P	N-CHANNEL 30V - 0.0035 W - 80A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET

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Descrição semelhante - STB80NF03L-04T4_09

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