SILICON EPITAXIAL

PNP TRANSISTOR

BCY71DCSM

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8108

Issue 1

Symbols

Parameters

Test Conditions

Min. Typ. Max. Units

VCE = -20V

VBE = 0

-0.1

ICES

Collector-Emitter Cut-Off

Current

VCE = -45V

VBE = 0

-10

IEBO

Emitter-Base Cut-Off

Current

VEB = -5V

IC = 0

10

µ

A

IC = -10mA

IB = -1.0mA

-0.25

VCE(sat)**

Collector-Emitter

Saturation Voltage

IC = -50mA

IB = -5mA

-0.5

IC = -10mA

IB = -1.0mA

-0.6

-0.9

VBE(sat)**

Base-Emitter

Saturation Voltage

IC = -50mA

IB = -5mA

-1.2

V

IC = -0.01mA

VCE = -1.0V

60

IC = -0.1mA

VCE = -1.0V

80

IC = -1.0mA

VCE = -1.0V

90

IC = -10mA

VCE = -1.0V

100

600

hFE**

Forward-current transfer

ratio

IC = -50mA

VCE = -1.0V

15

DYNAMIC CHARACTERISTICS

IC = -0.1mA

VCE = -20V

f = 10.7MHz

15

IC = -10mA

VCE = -20V

fT

Transition Frequency

f = 100MHz

250

MHz

IC = -1.0mA

VCE = -10V

hfe

Small-Signal Current Gain

f = 1.0KHz

100

400

IE = 0

VCB = -10V

Cobo

Output Capacitance

f = 1.0MHz

6

IC = 0

VEB = -1.0V

Cibo

Input Capacitance

f = 1.0MHz

8

pF

IC = -0.1mA

VCE = -5V

Rg = 2K

NF

Noise Figure

f = 10Hz To 10KHz

2

dB

IC = -1.0mA

VCE = -10V

hie

Input Impedance

f = 1.0KHz

2

12

K

IC = -1.0mA

VCE = -10V

hre

Reverse Voltage Ratio

f = 1.0KHz

20

x 10

-4

IC = -1.0mA

VCE = -10V

hoe

Output Admittance

f = 1.0KHz

10

60

µ

S

** Pulse Test: tp = 300us, δ ≤ 2%