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2SA1382 Folha de dados(PDF) 4 Page - Toshiba Semiconductor |
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2SA1382 Folha de dados(HTML) 4 Page - Toshiba Semiconductor |
4 / 5 page 2SA1382 2009-12-21 4 Base-emitter voltage VBE (V) IC – VBE Ambient temperature Ta (°C) PC – Ta Collector-emitter voltage VCE (V) Safe Operating Area Collector current IC (A) VBE (sat) – IC 0 0 200 400 600 800 1000 40 80 120 160 240 200 −0.1 −0.01 −10 Ta = −55°C 25 −0.1 −0.3 −1 −0.3 −0.5 −1 −3 Common emitter IC/IB = 30 100 −0.03 −3 −5 −0.01 −0.3 −0.03 −0.05 −0.1 −0.3 −0.5 −1 −5 −1 −3 −10 −30 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. IC max (continuous) IC max (pulsed)* 1 s* 10 ms* 100 μs* DC operation Ta = 25°C −3 −100 1 ms* 100 ms* VCEO max −2.0 0 0 −1.6 −1.2 −0.8 −0.4 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 Common emitter VCE = −2 V Ta = 100°C 25 −55 |
Nº de peça semelhante - 2SA1382 |
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Descrição semelhante - 2SA1382 |
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