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2SC2881 Folha de dados(PDF) 2 Page - Toshiba Semiconductor |
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2SC2881 Folha de dados(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page 2SC2881 2004-07-07 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 120 V, IE = 0 ― ― 0.1 µA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 0.1 µA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 120 ― ― V Emitter-base breakdown voltage V (BR) EBO IE = 1 mA, IC = 0 5 ― ― V DC current gain hFE (Note 2) VCE = 5 V, IC = 100 mA 80 ― 240 ― Collector-emitter saturation voltage VCE (sat) IC = 500 mA, IB = 50 mA ― ― 1.0 V Base-emitter voltage VBE VCE = 5 V, IC = 500 mA ― ― 1.0 V Transition frequency fT VCE = 5 V, IC = 100 mA ― 120 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― ― 30 pF Note 2: hFE classification O: 80 to 160, Y: 120 to 240 Marking C Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator |
Nº de peça semelhante - 2SC2881 |
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Descrição semelhante - 2SC2881 |
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