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2SC4667 Folha de dados(PDF) 1 Page - Toshiba Semiconductor |
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2SC4667 Folha de dados(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SC4667 2003-03-27 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4667 Ultra High Speed Switching Applications Computer, Counter Applications · High transition frequency: fT = 400 MHz (typ.) · Low saturation voltage: VCE (sat) = 0.3 V (max) · High speed switching time: tstg = 15 ns (typ.) Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 5 V Collector current IC 200 mA Base current IB 40 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Marking Unit: mm JEDEC ― JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006 g (typ.) |
Nº de peça semelhante - 2SC4667_03 |
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Descrição semelhante - 2SC4667_03 |
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