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2SC4690 Folha de dados(PDF) 1 Page - Toshiba Semiconductor

Nome de Peças 2SC4690
Descrição Electrónicos  Power Amplifier Applications
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

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2SC4690
2004-07-07
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC4690
Power Amplifier Applications
• High breakdown voltage: VCEO = 140 V (min)
• Complementary to 2SA1805
• Suitable for use in 70-W high fidelity audio amplifier’s output stage
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
140
V
Collector-emitter voltage
VCEO
140
V
Emitter-base voltage
VEBO
5
V
DC
IC
10
Collector current
Pulse
ICP
20
A
Base current
IB
1
A
Collector power dissipation
(Tc = 25°C)
PC
80
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 140 V, IE = 0
5.0
µA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
5.0
µA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
140
V
hFE (1)
(Note)
VCE = 5 V, IC = 1 A
55
160
DC current gain
hFE (2)
VCE = 5 V, IC = 5 A
35
85
Collector-emitter saturation voltage
VCE (sat)
IC = 7 A, IB = 0.7 A
0.3
2.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 5 A
0.9
1.5
V
Transition frequency
fT
VCE = 5 V, IC = 1 A
30
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
220
pF
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.)


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