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2SD1525 Folha de dados(PDF) 1 Page - Toshiba Semiconductor |
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2SD1525 Folha de dados(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SD1525 2009-08-06 1 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD1525 High Current Switching Applications • High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V Collector current IC 30 A Base current IB 5 A Collector power dissipation (Tc = 25°C) PC 150 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F1A Weight: 9.75 g (typ.) BASE EMITTER ≈ 2 kΩ ≈ 100 Ω COLLECTOR |
Nº de peça semelhante - 2SD1525 |
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Descrição semelhante - 2SD1525 |
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