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2SJ508 Folha de dados(PDF) 5 Page - Toshiba Semiconductor |
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2SJ508 Folha de dados(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SJ508 2009-09-29 5 rth − tw 1m 10m 100m 1 10 1 10 100 1000 1000 100 −0.1 −1 −10 −0.01 −0.1 −10 −0. 001 −100 −1 EAS – Tch −15 V 15 V TEST CIRCUIT WAVE FORM IAR BVDSS VDD VDS RG=25 Ω VDD = −50 V, L = 168mH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS 200 150 100 50 0 25 50 75 100 125 150 −1000 Single pulse 15×15×0.8 Single 20×20×0.8 Mounted on ceramic substrate 40×50×0.8mm *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. ID max (pulsed) * ID max (continuous) DC operation Ta = 25°C 1ms * 10 ms * VDSS max SAFE OPERATING AREA Drain-source voltage VDS (V) Pulse width tw (s) Channel temperature Tch (°C) |
Nº de peça semelhante - 2SJ508 |
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