TPC6108_08 datasheet(5/7 Pages) TOSHIBA

Nome de Peças	TPC6108

Descrição Electrónicos	Notebook PC Applications

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Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

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5 / 7 page

TPC6108

2008-12-04

5

Vth − Ta

0

−80

0

40

80

120

160

−40

−2.0

−0.4

−1.2

−0.8

−1.6

RDS (ON) − Ta

0

50

100

−40

−80

160

0

40

120

80

IDR − VDS

PD − Ta

2.0

0.5

1.0

1.5

0

80

40

160

120

−40

0

−30

−20

−10

0

8

12

4

−8

−4

−16

0

−12

150

10

−0.1

−100

100

−1

−10

10000

0.2

0

0.6

1.0

1.2

−0.1

−1

−100

−10

1000

Common source

Pulse Test

ID = −1.1/−2.2/−4.5 A

VGS = −10 V

VGS = −4.5 V

ID = −1.1/−2.2/−4.5 A

Common source

Ta

= 25°C

Pulse Test

−10

−5

−3

−1

VGS = 0 V

Common source

VGS = 0 V

f

= 1 MHz

Ta

= 25°C

Ciss

Coss

Crss

Common source

VGS = −10 V

ID = −1 mA

Pulse Test

(2) DC

(1) t

= 5s

(2) t

= 5s

(1) DC

(1) Device mounted on a

glass-epoxy board (a) (Note 2a)

(2) Device mounted on a

glass-epoxy board (b) (Note 2b)

2.5

16

20

Common source

ID = −4.5 A

Ta

= 25°C

Pulse Test

VDS

−6 V

−12 V

VDD = −24 V

VGS

Ambient temperature Ta (°C)

Total gate charge Qg (nC)

Capacitance – VDS

Drain-source voltage VDS (V)

Ambient temperature Ta (°C)

Drain-source voltage VDS (V)

Dynamic input / output

characteristics

0.4

0.8

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