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2N3740 Folha de dados(PDF) 1 Page - Microsemi Corporation

Nome de Peças 2N3740
Descrição Electrónicos  PNP POWER SILICON TRANSISTOR
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Fabricante Electrônico  MICROSEMI [Microsemi Corporation]
Página de início  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N3740 Folha de dados(HTML) 1 Page - Microsemi Corporation

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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/441
T4-LDS-0021 Rev. 2 (100698)
Page 1 of 3
DEVICES
LEVELS
2N3740
2N3741
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
2N3740 2N3741
Unit
Collector-Emitter Voltage
VCEO
60
80
Vdc
Collector-Base Voltage
VCBO
60
80
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
Base Current
IB
2.0
Adc
Collector Current
IC
4.0
Adc
Total Power Dissipation
@ TA = +25°C
(1)
@ TC = +100°C
PT
25
14
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
°C
Thermal Resistance, Junction-to-Case
RθJC
7.0
°C/W
Note: (1) Derate linearly @ 143 mW/°C for TC > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 100mAdc
2N3740
2N3741
V(BR)CEO
60
80
Vdc
Collector-Emitter Cutoff Current
VCE = 40Vdc
VCE = 60Vdc
2N3740
2N3741
ICEO
10
10
µAdc
Collector-Emitter Cutoff Current
VCE = 60Vdc, VBE = 1.5Vdc
VCE = 80Vdc, VBE = 1.5Vdc
2N3740
2N3741
ICEX
300
300
ηAdc
Collector-Base Cutoff Current
VCB = 60Vdc
VCB = 80Vdc
2N3740
2N3741
ICBO
100
100
ηAdc
Emitter-Base Cutoff Current
VEB = 7.0Vdc
IEBO
100
ηAdc
TO-66 (TO-213AA)
* See Appendix A for
Package Outline


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