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2N3498 Folha de dados(PDF) 2 Page - Microsemi Corporation |
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2N3498 Folha de dados(HTML) 2 Page - Microsemi Corporation |
2 / 3 page TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 T4-LDS-0056 Rev. 1 (080812) Page 2 of 3 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERISTICS Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 6.0Vdc IEBO 25 10 ηAdc μAdc ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc 2N3498, 2N3500 2N3499, 2N3501 20 35 IC = 1.0mAdc, VCE = 10Vdc 2N3498, 2N3500 2N3499, 2N3501 25 50 IC = 10mAdc, VCE = 10Vdc 2N3498, 2N3500 2N3499, 2N3501 35 75 IC = 150mAdc, VCE = 10Vdc 2N3498, 2N3500 2N3499, 2N3501 40 100 120 300 IC = 300mAdc, VCE = 10Vdc 2N3500 2N3501 15 20 IC = 500mAdc, VCE = 10Vdc 2N3498 2N3499 hFE 15 20 Collector-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc IC = 300mAdc, IB = 30mAdc IC = 150mAdc, IB = 15mAdc All Types 2N3498, 3N3499 2N3500, 2N3501 VCE(sat) 0.2 0.6 0.4 Vdc Base-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc IC = 300mAdc, IB = 30mAdc IC = 150mAdc, IB = 15mAdc All Types 2N3498, 3N3499 2N3500, 2N3501 VBE(sat) 0.8 1.4 1.2 Vdc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Magnitude, Forward Current Transfer Ratio IC = 20mAdc, VCE = 20Vdc, f = 100MHz |hfe| 1.5 8.0 Output Capacitance VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz 2N3498, 2N3499 2N3500, 2N3501 Cobo 10 8.0 pF Input Capacitance VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz Cibo 80 pF |
Nº de peça semelhante - 2N3498 |
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Descrição semelhante - 2N3498 |
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