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BAP63-03 Folha de dados(PDF) 4 Page - NXP Semiconductors |
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BAP63-03 Folha de dados(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 2001 May 18 4 Philips Semiconductors Product specification Silicon PIN diode BAP63-03 GRAPHICAL DATA handbook, halfpage 10 1 10−1 MGW126 10−1 110 IF (mA) rD ( Ω) 102 Fig.2 Forward resistance as a function of forward current; typical values. f = 100 MHz; Tj =25 °C. handbook, halfpage 020 500 400 0 100 MGW130 200 300 4 8 12 16 VR (V) Cd (fF) Fig.3 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 0123 0 −0.1 −0.3 −0.5 −0.4 −0.2 MGW131 f (GHz) |s21| 2 (dB) (1) (2) (3) (4) Fig.4 Insertion loss ( |s21|2) of the diode in on-state as a function of frequency; typical values. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb =25 °C. (3) IF = 1 mA. (4) IF =0.5 mA. (1) IF = 100 mA. (2) IF =10mA. handbook, halfpage 0123 0 −10 −30 −40 −20 MGW132 f (GHz) |s21| 2 (dB) Fig.5 Isolation ( |s21|2) of the diode in off-state as a function of frequency; typical values. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb =25 °C. |
Nº de peça semelhante - BAP63-03_00 |
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Descrição semelhante - BAP63-03_00 |
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