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BTA208S-800B Folha de dados(PDF) 2 Page - NXP Semiconductors

Nome de Peças BTA208S-800B
Descrição Electrónicos  3Q Hi-Com Triac Triggering in three quadrants only
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Fabricante Electrônico  NXP [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo NXP - NXP Semiconductors

BTA208S-800B Folha de dados(HTML) 2 Page - NXP Semiconductors

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BTA208S-800B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 14 April 2011
2 of 14
NXP Semiconductors
BTA208S-800B
3Q Hi-com Triac
2.
Pinning information
3.
Ordering information
4.
Limiting values
Table 2.
Pinning information
Pin
Symbol
Description
Simplified outline
Graphic symbol
1
T1
main terminal 1
SOT428 (DPAK)
2
T2
main terminal 2
3
G
gate
mb
T2
mounting base; main terminal 2
3
2
mb
1
sym051
T1
G
T2
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BTA208S-800B
DPAK
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
SOT428
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state voltage
-
800
V
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 102 °C; see Figure 1;
see Figure 2; see Figure 3
-8
A
ITSM
non-repetitive peak on-state
current
full sine wave; Tj(init) =25°C; tp = 20 ms;
see Figure 4; see Figure 5
-65
A
full sine wave; Tj(init) =25°C; tp = 16.7 ms
-
72
A
I2t
I2t for fusing
tp = 10 ms; sine-wave pulse
-
21
A2s
dIT/dt
rate of rise of on-state current
IT =12A; IG = 0.2 A; dIG/dt = 0.2 A/µs
-
100
A/µs
IGM
peak gate current
-
2
A
VGM
peak gate voltage
-
5
V
PGM
peak gate power
-
5
W
PG(AV)
average gate power
over any 20 ms period
-
0.5
W
Tstg
storage temperature
-40
150
°C
Tj
junction temperature
-
125
°C


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