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BCX41 Folha de dados(PDF) 1 Page - Infineon Technologies AG |
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BCX41 Folha de dados(HTML) 1 Page - Infineon Technologies AG |
1 / 7 page 2007-04-20 1 BCX41 1 2 3 NPN Silicon AF and Switching Transistor • For general AF applications • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: BCX42 (PNP) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 Type Marking Pin Configuration Package BCX41 EKs 1 = B 2 = E 3 = C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 125 V Collector-base voltage VCBO 125 Emitter-base voltage VEBO 5 Collector current IC 800 mA Peak collector current ICM 1 A Base current IB 100 mA Peak base current IBM 200 Total power dissipation TS ≤ 79 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS ≤ 215 K/W 1Pb-containing package may be available upon special request 2For calculation of RthJA please refer to Application Note Thermal Resistance |
Nº de peça semelhante - BCX41_07 |
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Descrição semelhante - BCX41_07 |
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