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BCW66KH Folha de dados(PDF) 1 Page - Infineon Technologies AG |
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BCW66KH Folha de dados(HTML) 1 Page - Infineon Technologies AG |
1 / 7 page 2007-04-20 1 BCW66 1 2 3 NPN Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary type: BCW68 (PNP) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 Type Marking Pin Configuration Package BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* EFs EFs EGs EGs EHs EHs 1=B 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 * Shrinked chip version Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 45 V Collector-base voltage VCBO 75 Emitter-base voltage VEBO 5 Collector current IC 800 mA Peak collector current ICM 1 A Base current IB 100 mA Peak base current IBM 200 Total power dissipation- TS ≤ 79 °C, BCW66 TS ≤ 115 °C, BCW66K Ptot 330 500 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 1Pb-containing package may be available upon special request |
Nº de peça semelhante - BCW66KH |
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Descrição semelhante - BCW66KH |
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