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BF1005S Folha de dados(PDF) 1 Page - Infineon Technologies AG |
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BF1005S Folha de dados(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page 2007-04-20 1 BF1005S... Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 G2 G1 GND AGC RF Input Drain RF Output + DC ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF1005S BF1005SR SOT143 SOT143R 1=S 1=D 2=D 2=S 3=G2 3=G1 4=G1 4=G2 - - - - NZs NZs Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 8 V Continuous drain current ID 25 mA Gate 1/ gate 2-source current ±I G1/2SM 10 Gate 1 (external biasing) +VG1SE 3 V Total power dissipation TS ≤ 76 °C Ptot 200 mW Storage temperature Tstg -55 ... 150 °C Channel temperature Tch 150 1Pb-containing package may be available upon special request Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. |
Nº de peça semelhante - BF1005S_07 |
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Descrição semelhante - BF1005S_07 |
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