BFY181_11 datasheet(3/4 Pages) INFINEON

Nome de Peças	BFY181

Descrição Electrónicos	HiRel NPN Silicon RF Transistor

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Fabricante Electrônico	INFINEON [Infineon Technologies AG]

Página de início	http://www.infineon.com

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3 / 4 page

BFY181

IFAG IMM RPD D HIR

3 of 4

V 2, February 2011

Electrical Characteristics (continued)

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Base-Emitter forward voltage

IE = 15 mA, IC = 0

VFBE

-

1

V

DC current gain

IC = 5 mA, VCE = 6 V

hFE

55

100

175

-

AC Characteristics

Transition frequency

IC = 10 mA, VCE = 5 V, f = 500 MHz

IC = 10 mA, VCE = 8 V, f = 500 MHz

fT

6.5

-

7.5

8

-

GHz

Collector-base capacitance

VCB = 10 V, VBE = vbe = 0, f = 1 MHz

CCB

-

0.21

0.29

pF

Collector-emitter capacitance

VCE = 10 V, VBE = vbe = 0, f = 1 MHz

CCE

-

0.34

-

pF

Emitter-base capacitance

VEB = 0.5V, VCB = vcb = 0, f = 1 MHz

CEB

-

0.45

0.6

pF

Noise Figure

IC = 4 mA, VCE = 5 V, f = 2 GHz,

ZS = ZSopt

F

-

2.2

2.9

dB

Power gain

IC = 10 mA, VCE = 5V, f = 2 GHz

ZS = ZSopt , ZL= ZLopt

Gma

1.)

13.5

14.5

-

dB

Transducer gain

IC = 10 mA, VCE = 5 V, f = 2 GHz

ZS = ZL = 50 

|S21e|

2

10

11

-

dB

Notes.:

1)

G

S

k

ma 



21

12

1

2

(

) ,

G

S

ms 

21

12

Nº de peça semelhante - BFY181_11

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Infineon Technologies A...	BFY181ES	29Kb / 5P	HiRel NPN Silicon RF Transistor September 99
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BFY181 Folha de dados(PDF) 3 Page - Infineon Technologies AG

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Nº de peça semelhante - BFY181_11

Descrição semelhante - BFY181_11

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