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BFY450 Folha de dados(PDF) 1 Page - Infineon Technologies AG |
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BFY450 Folha de dados(HTML) 1 Page - Infineon Technologies AG |
1 / 4 page BFY450 IFAG IMM RPD D HIR 1 of 4 V2, February 2011 HiRel NPN Silicon RF Transistor HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency f T = 20 GHz SIEGET25-Line Infineon Technologies Grounded Emitter Transistor- 25 GHz fT-Line Space Qualified ESA/SCC Detail Spec. No.: 5611/008 Type Variant No. 03 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration 1 2 3 4 Package BFY450 (ql) - see below C E B E Micro-X (ql) Quality Level: P: Professional Quality H: High Rel Quality S: Space Quality ES: ESA Space Quality (see order instructions for ordering example) 1 2 3 4 |
Nº de peça semelhante - BFY450_11 |
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Descrição semelhante - BFY450_11 |
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