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2N4351_TO-72 Folha de dados(PDF) 1 Page - Micross Components

Nome de Peças 2N4351_TO-72
Descrição Electrónicos  an enhancement mode N-Channel Mosfet
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Fabricante Electrônico  MICROSS [Micross Components]
Página de início  http://www.micross.com
Logo MICROSS - Micross Components

2N4351_TO-72 Folha de dados(HTML) 1 Page - Micross Components

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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx
FEATURES 
DIRECT REPLACEMENT FOR INTERSIL 2N4351 
HIGH DRAIN CURRENT 
ID = 100mA  
HIGH GAIN 
gfS = 1000µS 
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature ‐65°C to +200°C 
Operating Junction Temperature ‐55°C to +150°C 
Maximum Power Dissipation 
Continuous Power Dissipation  
375mW 
MAXIMUM CURRENT
Drain to Source (Note 1) 
100mA 
MAXIMUM VOLTAGES 
Drain to Body 
25V 
Drain to Source 
25V 
Peak Gate to Source (Note 2) 
±125V 
2N4351 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNITS 
CONDITIONS 
BVDSS 
Drain to Source Breakdown Voltage 
25 
‐‐ 
‐‐ 
 
I= 10µA,   VGS = 0V 
VDS(on) 
Drain to Source “On” Voltage 
‐‐ 
‐‐ 
                   I= 2mA,   VGS = 10V 
VGS(th) 
Gate to Source Threshold Voltage 
‐‐ 
VDS = 10V,    I= 10µA 
IGSS 
Gate Leakage Current 
‐‐ 
‐‐ 
10 
pA 
VGS = ±30V,   VDS = 0V 
IDSS 
Drain Leakage Current “Off” 
‐‐ 
‐‐ 
10 
nA 
VGS = 10V,   VDS = 10V 
ID(on) 
Drain Current “On” 
‐‐ 
‐‐ 
mA 
VGS = 10V,  VDS = 10V 
gfs 
Forward Transconductance 
1000 
‐‐ 
‐‐ 
µS 
VDS = 10V,    ID = 2mA ,   f = 1MHz 
rDS(on) 
Drain to Source “On” Resistance 
‐‐ 
‐‐ 
300 Ω 
VGS = 10V,   ID = 0A,   f = 1kHz 
Crss 
Reverse Transfer Capacitance 
‐‐ 
‐‐ 
1.3  
pF 
VDS = 0V,     VGS = 0V ,   f = 140kHz 
Ciss 
Input Capacitance 
‐‐ 
‐‐ 
VDS = 10V,     VGS = 0V ,   f = 140kHz 
Cdb 
Drain to Body Capacitance 
‐‐ 
‐‐ 
5.0 
VDB = 10V,   f = 140kHz 
  
 
 
 
 
 
SWITCHING CHARACTERISTICS                                                                                                                                     TIMING WAVEFORMS 
SYMBOL 
CHARACTERISTIC 
MAX 
UNITS 
td(on) 
Turn On Delay Time 
45  
ns 
tr 
Turn On Rise Time 
65 
td(off) 
Turn Off Delay Time 
60 
tf 
Turn Off Fall Time 
100 
 
 
  
                                  SWITCHING TEST CIRCUIT 
The 2N4351 is an enhancement mode N-Channel Mosfet
2N4351
N-CHANNEL MOSFET
Micross Components Europe
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
TO-72 (Bottom View)
Available Packages:
2N4351 in TO-72
2N4351 in bare die.
Please contact Micross for full
package and die dimensions
* Body tied to case
Note 1 ‐ Absolute maximum ratings are limiting values above which 2N4351 serviceability may be impaired. 
Note 2 ‐ Device must not be tested at ±125V more than once or longer than 300ms.
2N4351 Features:
Low ON Resistance
Low Capacitance
High Gain
High Gate Breakdown Voltage
Low Threshold Voltage
The 2N4351 is an enhancement mode N-Channel
Mosfet designed for use as a General Purpose amplifier
or switch
The hermetically sealed TO-72 package is well suited
for high reliability and harsh environment applications.
(See Packaging Information).


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