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LS301_PDIP Folha de dados(PDF) 1 Page - Micross Components

Nome de Peças LS301_PDIP
Descrição Electrónicos  MONOLITHIC DUAL NPN TRANSISTOR
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Fabricante Electrônico  MICROSS [Micross Components]
Página de início  http://www.micross.com
Logo MICROSS - Micross Components

LS301_PDIP Folha de dados(HTML) 1 Page - Micross Components

  LS301_PDIP Datasheet HTML 1Page - Micross Components  
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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
FEATURES 
HIGH  GAIN  
hFE ≥ 2000 @ 1µA TYP. 
LOW OUTPUT CAPACITANCE 
COBO ≤ 2.0pF 
TIGHT VBE MATCHING 
|VBE1 – VBE2 |= 0.2mV TYP. 
HIGH ft 
100MHz 
ABSOLUTE MAXIMUM RATINGS 
1 
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature ‐65°C to +200°C 
Operating Junction Temperature ‐55°C to +150°C 
Maximum Power Dissipation 
Continuous Power Dissipation (One side) 
250mW 
Continuous Power Dissipation (Both sides) 
500mW 
Linear Derating factor (One side) 
2.3mW/°C 
Linear Derating factor (Both sides) 
4.3mW/°C 
Maximum Currents 
Collector Current 
5mA 
  
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) 
SYMBOL 
CHARACTERISTIC 
MIN 
TYP 
MAX 
UNITS 
CONDITIONS 
|VBE1 – VBE2 
Base Emitter Voltage Differential 
‐‐ 
0.2 
mV 
I= 10µA, VCE = 5V 
∆|(VBE1 – VBE2)| / ∆T 
 
Base Emitter Voltage Differential 
Change with Temperature 
‐‐ 
µV/°C 
IC = 10µA, VCE = 5V 
TA = ‐55°C to +125°C 
|IB1 – IB2 | 
Base Current Differential 
‐‐ 
0.5 
nA 
IC = 10µA, VCE = 5V 
hFE1 /hFE2 
DC Current Gain Differential 
‐‐ 
‐‐ 
IC = 10µA, VCE = 5V 
 
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTICS 
MIN. 
TYP. 
MAX. 
UNITS 
CONDITIONS 
BVCBO 
Collector to Base Voltage 
18 
‐‐ 
‐‐ 
I= 10µA, I= 0 
BVCEO 
Collector to Emitter Voltage 
18 
‐‐ 
‐‐ 
I= 10µA, I= 0 
BVEBO 
Emitter‐Base Breakdown Voltage 
6.2 
‐‐ 
‐‐ 
I= 10µA, I= 0
2 
BVCCO 
Collector to Collector Voltage 
100 
‐‐ 
‐‐ 
I= 10µA, I= 0 
 
hFE 
 
DC Current Gain 
‐‐ 
2000 
‐‐ 
 
I= 1µA, VCE = 5V 
2000 
‐‐ 
‐‐ 
 
I= 10µA, VCE = 5V 
‐‐ 
2000 
‐‐ 
 
I= 500µA, VCE = 5V 
VCE(SAT) 
Collector Saturation Voltage 
‐‐ 
‐‐ 
0.5 
I= 1mA, I= 0.1mA 
IEBO 
Emitter Cutoff Current 
‐‐ 
‐‐ 
0.2 
pA 
I= 0, VEB = 3V 
ICBO 
Collector Cutoff Current 
‐‐ 
‐‐ 
100 
pA 
I= 0, VCB = 10V 
COBO 
Output Capacitance 
‐‐ 
‐‐ 
pF 
I= 0, VEB = 1V 
CC1C2 
Collector to Collector Capacitance 
‐‐ 
‐‐ 
pF 
VCC = 0V 
IC1C2 
Collector to Collector Leakage Current 
‐‐ 
‐‐ 
0.5 
nA 
VCC = ±80V 
fT 
Current Gain Bandwidth Product 
100 
‐‐ 
‐‐ 
MHz 
I= 200µA, VCE = 5V 
NF 
Narrow Band Noise Figure 
‐‐ 
‐‐ 
dB 
I= 10µA,  VCE = 3V, BW=200Hz, RG= 10KΩ,  
f = 1KHz 
Notes: 
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. 
 
 
 
 
LS301
MONOLITHIC DUAL
NPN TRANSISTOR
LS301 Features:
Very high gain
Tight matching
Low Output Capacitance
The LS301 is a monolithic pair of high voltage Super-
Beta NPN transistors mounted in a single P-DIP
package. The monolithic dual chip design reduces
parasitics and gives better performance while ensuring
extremely tight matching.
The 8 Pin P-DIP provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
Linear Systems High Voltage Super-Beta Monolithic Dual NPN
Available Packages:
LS301 in P-DIP
LS301 available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
P-DIP (Top View)


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