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LS5116 Folha de dados(PDF) 1 Page - Micross Components |
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LS5116 Folha de dados(HTML) 1 Page - Micross Components |
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1 / 1 page Click To Buy Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5116 LOW ON RESISTANCE rDS(on) ≤ 150Ω LOW CAPACITANCE 6pF ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐55°C to +200°C Operating Junction Temperature ‐55°C to +200°C Maximum Power Dissipation Continuous Power Dissipation 500mW MAXIMUM CURRENT Gate Current (Note 1) IG = ‐50mA MAXIMUM VOLTAGES Gate to Drain Voltage VGDS = 30V Gate to Source Voltage VGSS = 30V LS5116 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage 30 ‐‐ ‐‐ V IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage 1 ‐‐ 4 VDS = ‐15V, ID = ‐1nA VGS(F) Gate to Source Forward Voltage ‐‐ ‐0.7 ‐1 IG = ‐1mA, VDS = 0V VDS(on) Drain to Source On Voltage ‐‐ ‐1.0 ‐‐ VGS = 0V, ID = ‐15mA ‐‐ ‐0.7 ‐‐ VGS = 0V, ID = ‐7mA ‐‐ ‐0.5 ‐0.6 VGS = 0V, ID = ‐3mA IDSS Drain to Source Saturation Current (Note 2) ‐5 ‐‐ ‐25 mA VDS = ‐15V, VGS = 0V IGSS Gate Reverse Current ‐‐ 5 500 pA VGS = 20V, VDS = 0V IG Gate Operating Current ‐‐ ‐5 ‐‐ VDS = ‐15V, ID = ‐1mA ID(off) Drain Cutoff Current ‐‐ ‐10 ‐‐ VDS = ‐15V, VGS = 12V ‐‐ ‐10 ‐‐ VDS = ‐15V, VGS = 7V ‐‐ ‐10 ‐500 VDS = ‐15V, VGS = 5V rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 150 Ω ID = ‐1mA, VGS = 0V LS5116 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS gfs Forward Transconductance ‐‐ 4.5 ‐‐ mS VDS = ‐15V, ID = 1mA , f = 1kHz gos Output Conductance ‐‐ 20 ‐‐ µS rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 150 Ω ID = 0A, VGS = 0V, f = 1kHz Ciss Input Capacitance ‐‐ 20 25 pF VDS = ‐15V, VGS = 0V, f = 1MHz Crss Reverse Transfer Capacitance ‐‐ 5 ‐‐ VDS = 0V, VGS = 12V, f = 1MHz ‐‐ 6 ‐‐ VDS = 0V, VGS = 7V, f = 1MHz ‐‐ 6 7 VDS = 0V, VGS = 5V, f = 1MHz en Equivalent Noise Voltage ‐‐ 20 ‐‐ nV/√Hz VDG = 10V, ID = 10mA , f = 1kHz LS5116 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC UNITS CONDITIONS td(on) Turn On Time 12 ns VGS(L) = ‐5V VGS(H) = 0V See Switching Circuit tr Turn On Rise Time 30 td(off) Turn Off Time 10 tf Turn Off Fall Time 50 LS5116 SWITCHING CIRCUIT PARAMETERS VDD ‐6V VGG 8V RL 2kΩ RG 390Ω ID(on) ‐3mA LS5116 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N5116 This analog switch is designed for inverting switching into inverting input of an Operational Amplifier. The TO-92 provides a low cost option and ease of manufacturing. (See Packaging Information). LS5116 Applications: Analog Switches Commutators Choppers LS5116 Benefits: Low On Resistance ID(off) ≤ 500 pA Switches directly from TTL logic Available Packages: LS5116 in TO-92 LS5116 in bare die. Please contact Micross for full package and die dimensions Note 1 ‐ Absolute maximum ratings are limiting values above which LS5116 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3% SWITCHING TEST CIRCUIT TO-92 (Bottom View) |
Nº de peça semelhante - LS5116 |
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Descrição semelhante - LS5116 |
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