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LS351_SOT-23 Folha de dados(PDF) 1 Page - Micross Components

Nome de Peças LS351_SOT-23
Descrição Electrónicos  MONOLITHIC DUAL NPN TRANSISTOR
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Fabricante Electrônico  MICROSS [Micross Components]
Página de início  http://www.micross.com
Logo MICROSS - Micross Components

LS351_SOT-23 Folha de dados(HTML) 1 Page - Micross Components

  LS351_SOT-23 Datasheet HTML 1Page - Micross Components  
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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
FEATURES 
HIGH  GAIN  
hFE ≥ 150 @ 10µA‐1mA 
TIGHT VBE MATCHING 
|VBE1 – VBE2 |= 0.4mV TYP. 
HIGH ft 
275MHz TYP. @ 1mA 
ABSOLUTE MAXIMUM RATINGS 
1 
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature ‐65°C to +200°C 
Operating Junction Temperature ‐55°C to +150°C 
Maximum Power Dissipation 
Continuous Power Dissipation (One side) 
250mW 
Continuous Power Dissipation (Both sides) 
500mW 
Linear Derating factor (One side) 
2.3mW/°C 
Linear Derating factor (Both sides) 
4.3mW/°C 
Maximum Currents 
Collector Current 
10mA 
  
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) 
SYMBOL 
CHARACTERISTIC 
MIN 
TYP 
MAX 
UNITS 
CONDITIONS 
|VBE1 – VBE2 
Base Emitter Voltage Differential 
‐‐ 
0.4 
1.0 
mV 
I= 10µA, VCE = 5V 
∆|(VBE1 – VBE2)| / ∆T 
 
Base Emitter Voltage Differential 
Change with Temperature 
‐‐ 
10 
µV/°C 
I= 10µA, VCE = 5V 
TA = ‐55°C to +125°C 
|IB1 – IB2 | 
Base Current Differential 
‐‐ 
‐‐ 
nA 
IC = 10µA, VCE = 5V 
|∆ (IB1 – IB2)|/°C 
Base Current Differential 
 Change with Temperature 
‐‐ 
‐‐ 
0.3 
nA/°C 
IC = 10µA, VCE = 5V 
TA = ‐55°C to +125°C 
hFE1 /hFE2 
DC Current Gain Differential 
‐‐ 
‐‐ 
IC = 10µA, VCE = 5V 
 
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTICS 
MIN. 
TYP. 
MAX. 
UNITS 
CONDITIONS 
BVCBO 
Collector to Base Voltage 
45 
‐‐ 
‐‐ 
I= 10µA, I= 0 
BVCEO 
Collector to Emitter Voltage 
45 
‐‐ 
‐‐ 
I= 10µA, I= 0 
BVEBO 
Emitter‐Base Breakdown Voltage 
6.2 
‐‐ 
‐‐ 
I= 10µA, I= 0
2 
BVCCO 
Collector to Collector Voltage 
60 
‐‐ 
‐‐ 
I= 10µA, I= 0 
 
hFE 
 
DC Current Gain 
150 
‐‐ 
600  
I= 10µA, VCE = 5V 
150 
‐‐ 
600  
I= 100µA, VCE = 5V 
150 
‐‐ 
‐‐ 
 
I= 1mA, VCE = 5V 
VCE(SAT) 
Collector Saturation Voltage 
‐‐ 
‐‐ 
0.5 
I= 1mA, I= 0.1mA 
IEBO 
Emitter Cutoff Current 
‐‐ 
‐‐ 
0.2 
nA 
I= 0, VCB = 3V 
ICBO 
Collector Cutoff Current 
‐‐ 
‐‐ 
0.2 
nA 
I= 0, VCB = 20V 
COBO 
Output Capacitance 
‐‐ 
‐‐ 
pF 
I= 0, VCB = 5V 
CC1C2 
Collector to Collector Capacitance 
‐‐ 
‐‐ 
pF 
VCC = 0V 
IC1C2 
Collector to Collector Leakage Current 
‐‐ 
‐‐ 
0.5 
nA 
VCC = ±45V 
fT 
Current Gain Bandwidth Product 
200 
‐‐ 
‐‐ 
MHz 
I= 1mA, VCE = 5V 
NF 
Narrow Band Noise Figure 
‐‐ 
‐‐ 
dB 
I= 100µA,  VCE = 5V, BW=200Hz, RG= 10KΩ,  
f = 1KHz 
Notes: 
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. 
 
 
 
 
LS351
MONOLITHIC DUAL
PNP TRANSISTOR
LS351 Features:
Very high gain
Tight matching
Low Output Capacitance
The LS351 is a monolithic pair of PNP transistors
mounted in a single SOT-23 package. The monolithic
dual chip design reduces parasitics and gives better
performance while ensuring extremely tight matching.
The 6 Pin SOT-23 provides ease of manufacturing, and
a lower cost assembly option.
(See Packaging Information).
Linear Systems Monolithic Dual PNP Transistor
Available Packages:
LS351 in SOT-23
LS351 available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
SOT-23 (Top View)


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