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LS5911 Folha de dados(PDF) 1 Page - Micross Components |
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LS5911 Folha de dados(HTML) 1 Page - Micross Components |
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1 / 1 page Click To Buy Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. FEATURES Improved Direct Replacement for SILICONIX & NATIONAL 2N5911 LOW NOISE (10KHz) en~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ≥ 4000µS ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature ‐55°C to +135°C Maximum Power Dissipation Continuous Power Dissipation (Total) 500mW Maximum Currents Gate Current 50mA Maximum Voltages Gate to Drain ‐25V Gate to Source ‐25V MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS |VGS1 – VGS2 | Differential Gate to Source Cutoff Voltage ‐‐ ‐‐ 10 mV VDG = 10V, ID = 5mA ∆|VGS1 – VGS2 | / ∆T Differential Gate to Source Cutoff Voltage Change with Temperature ‐‐ ‐‐ 20 µV/°C VDG = 10V, ID = 5mA TA = ‐55°C to +125°C IDSS1 / IDSS2 Gate to Source Saturation Current Ratio 0.95 ‐‐ 1 % VDS = 10V, VGS = 0V |IG1 – IG2 | Differential Gate Current ‐‐ ‐‐ 20 nA VDG = 10V, ID = 5mA TA = +125°C gfs1 / gfs2 Forward Transconductance Ratio 2 0.95 ‐‐ 1 % VDS = 10V, ID = 5mA, f = 1kHz CMRR Common Mode Rejection Ratio ‐‐ 85 ‐‐ dB VDG = 5V to 10V, ID = 5mA ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐25 ‐‐ V IG = ‐1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage ‐1 ‐‐ ‐5 VDS = 10V, ID = 1nA VGS(F) Gate to Source Forward Voltage ‐‐ 0.7 ‐‐ IG = 1mA, VDS = 0V VGS Gate to Source Voltage ‐0.3 ‐‐ ‐4 VDG = 10V, IG = 5mA IDSS Gate to Source Saturation Current 3 7 ‐‐ 40 mA VDS = 10V, VGS = 0V IGSS Gate Leakage Current 3 ‐‐ ‐1 ‐50 pA VGS = ‐15V, VDS = 0V IG Gate Operating Current ‐‐ ‐1 ‐50 VDG = 10V, ID = 5mA gfs Forward Transconductance 4000 ‐‐ 10000 µS VDG = 10V, ID= 5mA 4000 ‐‐ 10000 gos Output Conductance ‐‐ ‐‐ 100 ‐‐ ‐‐ 150 CISS Input Capacitance ‐‐ ‐‐ 5 pF VDG = 10V, ID = 5mA, f = 1MHz CRSS Reverse Transfer Capacitance ‐‐ ‐‐ 1.2 NF Noise Figure ‐‐ ‐‐ 1 dB VDG = 10V, ID = 5mA, f = 10kHz, RG = 100KΩ en Equivalent Input Noise Voltage ‐‐ 7 20 nV/√Hz VDG = 10V, ID = 5mA, f = 100Hz ‐‐ 4 10 VDG = 10V, ID = 5mA, f = 10kHz Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3% 3. Assumes smaller value in numerator LS5911 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix & National 2N5911 LS5911 Applications: Wideband Differential Amps High-Speed,Temp-Compensated Single- Ended Input Amps High-Speed Comparators Impedance Converters and vibrations detectors. The LS5911 are monolithic dual JFETs. The monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These devices are an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. The LS5911 is a direct replacement for discontinued Siliconix and National 2N5911. The 8 Pin P-DIP provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). Please contact Micross for full package and die dimensions: Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx Available Packages: LS5911 in PDIP LS5911 available as bare die |
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