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ADM1276-3ACPZ-RL Folha de dados(PDF) 6 Page - Analog Devices

Nome de Peças ADM1276-3ACPZ-RL
Descrição Electrónicos  Hot Swap Controller and Digital Power and Energy Monitoring with PMBus Interface
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Fabricante Electrônico  AD [Analog Devices]
Página de início  http://www.analog.com
Logo AD - Analog Devices

ADM1276-3ACPZ-RL Folha de dados(HTML) 6 Page - Analog Devices

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ADM1276
Rev. 0 | Page 6 of 48
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions/Comments
GPO2/ALERT2 PIN
Output Low Voltage
VOL_GPO2
0.4
V
IGPO2 = 1 mA
1.5
V
IGPO2 = 5 mA
Leakage Current
100
nA
VGPO2 ≤ 2 V; GPO output high-Z
1
μA
VGPO2 = 20 V; GPO output high-Z
PWRGD PIN
Output Low Voltage
VOL_PWRGD
0.4
V
IPWRGD = 1 mA
1.5
V
IPWRGD = 5 mA
VCC That Guarantees Valid
Output
1
V
ISINK = 100 μA; VOL_PWRGD = 0.4 V
Leakage Current
100
nA
VPWRGD ≤ 2 V; PWRGD output high-Z
1
μA
VPWRGD = 20 V; PWRGD output high-Z
CURRENT AND VOLTAGE
MONITORING
Current Sense Absolute
Error
25 mV input range; 128 sample averaging (unless otherwise
noted)
±0.2
±0.7
%
VSENSE = 20 mV; VSENSE+ = 12 V; TA = 0°C to 65°C
±0.08
%
VSENSE = 20 mV; VSENSE+ = 12 V; TA = 25°C
±1.0
%
VSENSE = 20 mV
±0.08
%
VSENSE = 20 mV; TA = 25°C
±0.2
%
VSENSE = 20 mV; TA = 0°C to 65°C
±1.0
%
VSENSE = 20 mV; 16 sample averaging
±0.08
%
VSENSE = 20 mV; 16 sample averaging; TA = 25°C
±0.2
%
VSENSE = 20 mV; 16 sample averaging; TA = 0°C to 65°C
±2.8
%
VSENSE = 20 mV; 1 sample averaging
±0.09
%
VSENSE = 20 mV; 1 sample averaging; TA = 25°C
±0.2
%
VSENSE = 20 mV; 1 sample averaging; TA = 0°C to 65°C
±0.7
%
VSENSE = 25 mV; VSENSE+ = 12 V
±0.04
%
VSENSE = 25 mV; VSENSE+ = 12 V; TA = 25°C
±0.15
%
VSENSE = 25 mV; VSENSE+ = 12 V; TA = 0°C to 65°C
±0.75
%
VSENSE = 20 mV; VSENSE+ = 12 V
±0.8
%
VSENSE = 15 mV; VSENSE+ = 12 V
±1.1
%
VSENSE = 10 mV; VSENSE+ = 12 V
±2.0
%
VSENSE = 5 mV; VSENSE+ = 12 V
±4.3
%
VSENSE = 2.5 mV; VSENSE+ = 12 V
SENSE+/VOUT Absolute
Error
±1.0
%
Low input range; input voltage ≥ 3 V
±1.0
%
High input range; input voltage ≥ 10 V
ADC Conversion Time
Includes time for power multiplication
237
280
μs
1 sample of VIN and IOUT; from command received to valid
data in register
360
426
μs
1 sample of VIN, VOUT, and IOUT; from command received to
valid data in register
3753
4233
μs
16 samples of VIN and IOUT averaged; from command
received to valid data in register
5545
6570
μs
16 samples of VIN, VOUT, and IOUT averaged; from command
received to valid data in register
Power Multiplication Time
14
μs
ADR PIN
Address Set to 00
0
0.8
V
Connect to GND
Input Current for Address 00
−40
−22
μA
VADR = 0 V to 0.8 V
Address Set to 01
135
150
165
Resistor to GND
Address Set to 10
−1
+1
μA
No connect state; maximum leakage current allowed


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