TS9001-1 datasheet(3/8 Pages) TOUCHSTONE

Nome de Peças	TS9001-1

Descrição Electrónicos	1.6V Nanopower Comparator with Internal Reference

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Fabricante Electrônico	TOUCHSTONE [Touchstone Semiconductor Inc]

Página de início	http://www.touchstonesemi.com

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TS9001

TS9001DS r1p0

Page 3

RTFDS

ELECTRICAL CHARACTERISTICS: TS9001-1/2

VCC = +5V, VEE = 0V, VIN+ = VREF, TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C. See Note 1

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

Supply Voltage Range

VCC

Inferred from the

PSRR test

TA = TMIN to TMAX

1.6

5.5

Supply Current

ICC

VCC = 1.6V

TA = +25°C

0.6

1

μA

VCC = 5V

TA = +25°C

0.68

1.30

TA = TMIN to TMAX

1.60

IN+ Voltage Range

VIN+

Inferred from the output swing test

VEE - 0.2

VCC + 0.2

V

Input Offset Voltage

VOS

(Note 2)

TA = +25°C

2

5

mV

TA = TMIN to TMAX

10

Input-Referred Hysteresis

VHB

(Note 3)

4

mV

Input Bias Current

IB

TA = +25°C

0.15

1

nA

TA = TMIN to TMAX

2

Power-Supply Rejection Ratio

PSRR

VCC = 1.6V to 5.5V, TA = TMIN to TMAX

1

mV/V

Output-Voltage Swing High

VCC - VOH

TS9001-1, VCC = 5V,

ISOURCE = 5mA

TA = +25°C

200

300

mV

TA = TMIN to TMAX

400

TS9001-1,

ISOURCE = 1mA

VCC = 1.6V,

TA = +25°C

100

150

VCC = 1.6V,

TA = TMIN to TMAX

200

Output-Voltage Swing Low

VOL

VCC = 5V, ISINK = 5mA

TA = +25°C

110

200

mV

TA = TMIN to TMAX

300

ISINK = 1mA

VCC = 1.6V,

TA = +25°C

50

100

VCC = 1.6V,

TA = TMIN to TMAX

150

Output Leakage Current

ILEAK

TS9001-2 only, VO = 5.5V

0.002

1

μA

Output Short-Circuit Current

ISC

Sourcing, VO = VEE

VCC = 5V

60

mA

VCC = 1.6V

6

Sinking, VO = VCC

VCC = 5V

90

VCC = 1.6V

10

High-to-Low Propagation Delay

(Note 4)

tPD-

VCC = 1.6V

12

µs

VCC = 5V

15

Low-to-High Propagation Delay

(Note 4)

tPD+

TS9001-1 only

VCC = 1.6V

25

µs

VCC = 5V

50

TS9001-2 only

VCC = 1.6V,

RPULLUP = 100kΩ

21

VCC = 5V,

RPULLUP = 100kΩ

28

Rise Time

tRISE

TS9001-1 only, CL = 15pF

3.5

µs

Fall Time

tFALL

CL = 15pF

2

µs

Power-Up Time

tON

1.2

ms

Reference Voltage

VREF

TA = +25°C

1.2395

1.252

1.2645

V

TA = TMIN to TMAX

1.2332

1.2708

Reference Voltage

Temperature Coefficient

TCVREF

40

ppm/°C

Reference Output Voltage

Noise

en

BW = 10Hz to 100kHz

0.6

mVRMS

BW = 10Hz to 100kHz, CREF = 1nF

0.2

Reference Line Regulation

∆VREF/ ∆VCC VCC = 1.6V to 5.5V

0.1

mV/V

Reference Load Regulation

∆VREF/ ∆IOUT ∆IOUT = 10nA

±0.2

mV/nA

Note 1:

All specifications are 100% tested at TA = +25°C. Specification limits over temperature (TA = TMIN to TMAX) are guaranteed by

device characterization, not production tested.

Note 2:

VOS is defined as the center of the hysteresis band at the input.

Note 3:

The hysteresis-related trip points are defined by the edges of the hysteresis band and measured with respect to the center of

the hysteresis band (i.e., VOS). See Figure 2.

Note 4:

The propagation delays are specified with an input overdrive (VOVERDRIVE) of 100mV and an output load capacitance of

CL = 15pF. VOVERDRIVE is defined above and is beyond the offset voltage and hysteresis of the comparator input. Reference

voltage error should also be included.

Nº de peça semelhante - TS9001-1

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Silicon Laboratories	TS9001-1	1Mb / 15P	1.6V Nanopower Comparator with Internal Reference
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	TS9001-1IJ5T	1Mb / 15P	1.6V Nanopower Comparator with Internal Reference

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Descrição semelhante - TS9001-1

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
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