BUL58BSMD datasheet(1/2 Pages) SEME-LAB

Nome de Peças	BUL58BSMD

Descrição Electrónicos	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

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Fabricante Electrônico	SEME-LAB [Seme LAB]

Página de início	http://www.semelab.co.uk

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Prelim. 7/00

BUL58BSMD

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

VCBO

Collector – Base Voltage

VCEO

Collector – Emitter Voltage (IB = 0)

VEBO

Emitter – Base Voltage (IC = 0)

IC

Collector Current

IC(PK)

Peak Collector Current

IB

Base Current

Ptot

Total Dissipation at Tcase = 25°C

Derate above 25°C when used on efficient heatsink

Tstg

Operating and Storage Temperature Range

180V

90V

10V

7A

10A

2A

50W

0.28W/°C

–65 to 200°C

MECHANICAL DATA

Dimensions in mm

3. 60 ( 0. 142)

Ma x .

3. 70 ( 0. 146)

3. 41 ( 0. 134)

3. 70 ( 0. 146)

3. 41 ( 0. 134)

0. 89

( 0 . 035)

mi n .

9. 67 ( 0. 381)

9. 38 ( 0. 369)

11. 58 ( 0 . 4 56)

11. 28 ( 0 . 4 44)

0. 50 ( 0. 020)

0. 26 ( 0. 010)

13

2

ADVANCED

DISTRIBUTED BASE DESIGN

HIGH VOLTAGE

HIGH SPEED NPN

SILICON POWER TRANSISTOR

• SEMEFAB DESIGNED AND DIFFUSED

• HIGH VOLTAGE

• FAST SWITCHING

• HIGH ENERGY RATING

SMD1 PACKAGE

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

FEATURES

• Multi–base for efficient energy distribution

across the chip resulting in significantly

improved switching and energy ratings

across full temperature range.

• Ion implant and high accuracy masking for

tight control of characteristics from batch to

batch.

• Triple Guard Rings for improved control of

high voltages.

Pad 1 – Base

Pad 2 – Collector

Pad 3 – Emitter

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